Vertical field effect transistor based on graphene-WS2 heterostructures

It is well demonstrated that graphene, a 2D atom thick sheet, has the potentials to bring revolution in electronic industry. With the development of other 2D materials like h-BN and transistion metal dichalcogenides like MoS2, WS2, the graphene applications can be truly realized.  
Taking another leap in this direction, researchers have demonstrated a flexible vertical field effect transistor based on graphene-WS2-h BN heterostructures which is a proof of concept device. 

http://www.nature.com/nnano/journal/vaop/ncurrent/abs/nnano.2012.224.html