Thursday, January 3, 2013

Vertical field effect transistor based on graphene-WS2 heterostructures

It is well demonstrated that graphene, a 2D atom thick sheet, has the potentials to bring revolution in electronic industry. With the development of other 2D materials like h-BN and transistion metal dichalcogenides like MoS2, WS2, the graphene applications can be truly realized.  
Taking another leap in this direction, researchers have demonstrated a flexible vertical field effect transistor based on graphene-WS2-h BN heterostructures which is a proof of concept device.

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