Negative differential conductance in graphene transistors

Graphene's low density of states have been utilised for resonant tunneling through a boron nitride film and negative differential conductance in graphene transistors. The device is comprised of a few layer thick boron nitride layer sandwiched between graphene layers. The few atomic thick device promises to have ultrafast transient times.

http://www.nature.com/ncomms/journal/v4/n4/abs/ncomms2817.html?WT.ec_id=NCOMMS-20130430