Micro-wave-chemical vapor deposition of graphene walls

Microwave plasma CVD is used to grow vertically standing graphene walls which can be utilised as field emitters. The technique holds promise to grow graphene at low temperatures.

http://onlinelibrary.wiley.com/doi/10.1002/adma.201203902/abstract

Nanoscale Radiative Heat Flow due to Surface Plasmons in Graphene and Doped Silicon

Owing to its two-dimensional electronic structure, graphene exhibits many unique properties. One of them is a wave vector and temperature dependent plasmon in the infrared range. Theory predicts that due to these plasmons, graphene can be used as a universal material to enhance nanoscale radiative heat exchange for any dielectric substrate. Here we report on radiative heat transfer experiments between SiC and a SiO₂ sphere that have nonmatching phonon polariton frequencies, and thus only weakly exchange heat in near field. We observed that the heat flux contribution of graphene epitaxially grown on SiC dominates at short distances. The influence of plasmons on radiative heat transfer is further supported with measurements for doped silicon. These results highlight graphene’s strong potential in photonic near field and energy conversion devices.

http://prl.aps.org/abstract/PRL/v109/i26/e264301

Carrier Drift Velocity and Edge Magnetoplasmons in Graphene

In a fundamental study using exfoliated graphene, the researchers investigate electron dynamics at graphene edge by studying the propagation of collective edge magnetoplasmon excitations.

http://prl.aps.org/abstract/PRL/v110/i1/e016801

Electrical Control of Silicon Photonic Crystal Cavity by Graphene

Efficient conversion of electrical signal to optical signal in nano-photonics enables solid state integration of electronics and photonics. In a recent work, cavity resonance of a Si photonic crystal cavity covered by graphene is significantly changed.

http://pubs.acs.org/doi/abs/10.1021/nl3039212

Vertical field effect transistor based on graphene-WS2 heterostructures

It is well demonstrated that graphene, a 2D atom thick sheet, has the potentials to bring revolution in electronic industry. With the development of other 2D materials like h-BN and transistion metal dichalcogenides like MoS2, WS2, the graphene applications can be truly realized.  
Taking another leap in this direction, researchers have demonstrated a flexible vertical field effect transistor based on graphene-WS2-h BN heterostructures which is a proof of concept device. 

http://www.nature.com/nnano/journal/vaop/ncurrent/abs/nnano.2012.224.html

3D freestanding graphene-MnO2 composite for supercapacitor applications

CVD grown graphene on Ni foam yields a nice 3D graphene network. Researchers have loaded this structure with MnO2 and converted it into an active material  for supercapacitor applications.

http://pubs.acs.org/doi/abs/10.1021/nn304833s

Band gap engineered CVD graphene

We have successfully opened up band gap in CVD grown graphene by in-situ BN doping. A band gap of around 0.6 eV is opened. The present work paves way for graphene based technology where band gap is needed.

http://pubs.acs.org/doi/abs/10.1021/nn3049158