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Sunday, December 23, 2012

Electron energy loss spectroscopy helps in probing single Si atom dopant in graphene

A combination of scanning electron micsroscope (SEM), electron energy loss spectroscopy (EELS) and ab-initio calculations reveal the bonding and electronic structure of single Si atom dopant in graphene.
http://pubs.acs.org/doi/abs/10.1021/nl304187e


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