Epitaxial graphene grown on SiC has excellent quality in terms of mobility and is a candidate for microelectronics industry. However, graphene's interaction with SiC disturbs most of the properties. In a recent ACS Nano report, researchers have used oxygen as an intercalant to lift graphene from SiC and opens up ways for further applications.
http://pubs.acs.org/doi/abs/10.1021/nn302729j
http://pubs.acs.org/doi/abs/10.1021/nn302729j
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