A combination of scanning electron micsroscope (SEM), electron energy loss spectroscopy (EELS) and ab-initio calculations reveal the bonding and electronic structure of single Si atom dopant in graphene.
http://pubs.acs.org/doi/abs/10.1021/nl304187e
Epitaxial graphene grown on SiC has excellent quality in terms of mobility and is a candidate for microelectronics industry. However, graphene's interaction with SiC disturbs most of the properties. In a recent ACS Nano report, researchers have used oxygen as an intercalant to lift graphene from SiC and opens up ways for further applications.
http://pubs.acs.org/doi/abs/10.1021/nn302729j
Graphene is strongly known for its exotic electronic properties. However, spin properties of graphene are also vitally important for new spintronics based devices. A recent report published in Nature reveals hole spin resonance and zero-field psuedo splitting in epitaxial graphene photoexcited by microwaves.
http://www.nature.com/ncomms/journal/v3/n8/full/ncomms1986.html